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Phase transformations induced by spherical indentation in ion-implanted amorphous silicon

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dc.contributor.authorHaberl, Bianca
dc.contributor.authorBradby, J. E.
dc.contributor.authorRuffell, S.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorMunroe, P.
dc.date.accessioned2015-10-01T23:38:57Z
dc.date.available2015-10-01T23:38:57Z
dc.date.issued2006-07-12
dc.date.updated2015-12-12T07:21:31Z
dc.description.abstractThe deformation behavior of ion-implanted (unrelaxed) and annealed ion-implanted (relaxed) amorphous silicon(a-Si) under spherical indentation at room temperature has been investigated. It has been found that the mode of deformation depends critically on both the preparation of the amorphous film and the scale of the mechanical deformation.Ex situmeasurements, such as Raman microspectroscopy and cross-sectional transmission electron microscopy, as well as in situ electrical measurements reveal the occurrence of phase transformations in all relaxed a-Si films. The preferred deformation mode of unrelaxed a-Si is plastic flow, only under certain high load conditions can this state of a-Si be forced to transform. In situ electrical measurements have revealed more detail of the transformation process during both loading and unloading. We have used ELASTICA simulations to obtain estimates of the depth of the metallic phase as a function of load, and good agreement is found with the experiment. On unloading, a clear change in electrical conductivity is observed to correlate with a “pop-out” event on load versus penetration curves.
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15751
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 2/10/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2210767
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Amorphous films; Annealing; Computer simulation; Ion implantation; Phase transitions; Temperature distribution; Transmission electron microscopy; Mechanical deformation; Raman microspectroscopy; Room temperature; Spherical indentation; Amorphous silicon
dc.titlePhase transformations induced by spherical indentation in ion-implanted amorphous silicon
dc.typeJournal article
local.bibliographicCitation.issue1en_AU
local.bibliographicCitation.startpage013520en_AU
local.contributor.affiliationHaberl, Bianca, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australiaen_AU
local.contributor.authoruidu4284509en_AU
local.contributor.authoruidu9908195en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020406en_AU
local.identifier.absfor091299en_AU
local.identifier.ariespublicationMigratedxPub11590en_AU
local.identifier.citationvolume100en_AU
local.identifier.doi10.1063/1.2210767en_AU
local.identifier.scopusID2-s2.0-33746255234
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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