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InP Nanowires Grown by SA-MOVPE

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Date

2012

Authors

Gao, Qian
Fu, Lan
Parkinson, Patrick
Breuer, Steffan
Wong-Leung, Jennifer
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.

Description

Keywords

Keywords: High quality; InP; Metal-organic; Nanowires (NWs); Optical qualities; Time-resolved photoluminescence; Vapour-phase; Microelectronics; Nanowires

Citation

URI

http://hdl.handle.net/1885/60153

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472352

Restricted until

2037-12-31

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Description
01_Gao_InP_Nanowires_Grown_by_2012.pdf (218.42 KB)

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