Nanowires for optoelectronic device applications

Date

2009

Authors

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kang, Jung-Hyun
Kim, Young Dae
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zhang, Xin
Zou, Jin

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Conference Organising Committee

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III ratio or growth rate. The crystal structure of InP nanowires, ie, WZ or ZB, can also be engineered by just controlling the V/III ratio.

Description

Keywords

Keywords: Au nanoparticle; Crystal qualities; Defect-free; GaAs; Growth parameters; InP; Metalorganic chemical vapor deposition; Research activities; Two-temperature; V/III ratio; Building materials; Crystal structure; Gallium arsenide; Gold; Gold coatings; Insulat

Citation

Source

Physica Status Solidi (C) Current Topics in Solid State Physics

Type

Conference paper

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DOI

10.1002/pssc.200982528

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