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On the Migration Behaviour of Metal Impurities in Si During Secondary Ion Mass Spectrometry Profiling Using Low-Energy Oxygen Ions

Date

1999

Authors

Deenapanray, Prakash
Petravic, Mladen

Journal Title

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Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Secondary ion mass spectrometry (SIMS) was used to investigate the segregation of several metal impurities in Si under low-energy oxygen ion bombardment. Our results suggested that both the segregation of Ca, Cr, and Ta at the SiO2/Si interface, and the antisegregation of Ti, Hf, and Zr into the oxide were thermodynamically driven. The migration behavior of Ca indicates that CaO, having a higher heat of formation than Si, was most probably formed under oxygen bombardment. Sharper in-depth profiles were obtained for Ti, Zr, and Hf (metals with lower heat of oxide formation than Si) by bombarding at angles of incidence for which a stoichiometric surface oxide is formed. The effect of impurity diffusivity is demonstrated through SIMS measurements at elevated temperatures (∼350-380°C) for Cr, Zr, Ta, and Ti.

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Citation

Source

Journal of Applied Physics

Type

Journal article

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DOI

Restricted until

2037-12-31