Temperature dependent properties of InSb and InAs nanowire field-effect transistors
Date
2010-04-16
Authors
Nilsson, Henrik A.
Caroff, Philippe
Thelander, Claes
Lind, Erik
KarlstroĢm, Olov
Wernersson, Lars-Erik
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American Institute of Physics
Abstract
We present temperature dependent electrical measurements on InSb and InAs nanowire field-effect transistors (FETs). The FETs are fabricated from InAs/InSb heterostructure nanowires, where one complete transistor is defined within each of the two segments. Both the InSb and the InAs FETs are n-type with good current saturation and low voltage operation. The off-current for the InSb FET shows a strong temperature dependence, which we attribute to a barrier lowering due to an increased band-to-band tunneling in the drain part of the channel.
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Keywords: Band to band tunneling; Barrier lowering; Current saturation; Electrical measurement; Heterostructures; InAs; InAs nanowire field-effect transistors; Low voltage operation; Off-current; Temperature dependence; Temperature dependent; Temperature-dependent
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Applied Physics Letters
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Journal article
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