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Effects of carbon on ion-implantation-induced disorder in GaN

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Date

2007-12-26

Authors

Kucheyev, S. O.
Bradby, J. E.
Li, C. P.
Ruffell, S.
van Buuren, T.
Felter, T. E.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Wurtzite GaN films bombarded with 40keV C ions to high doses (5×10¹⁷ and 1×10¹⁸cm⁻²) are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and soft x-ray absorption spectroscopy. Results show that, contrary to other ion species, implanted C forms nitrilelike carbon-nitride bonds (—C≡N) and suppresses ion-beam-induced material decomposition involving the formation and agglomeration of ≳5-nm-large N₂ gas bubbles.

Description

Keywords

Keywords: Gallium compounds; Ion implantation; Rutherford backscattering spectroscopy; Transmission electron microscopy; X ray absorption spectroscopy; Carbon-nitride bonds (CN); GaN films; Carbon

Citation

URI

http://hdl.handle.net/1885/95031

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.2827587

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