Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
Date
2013-07-08
Authors
Rolland, ChloƩ
Caroff, Philippe
Coinon, Christophe
Wallart, Xavier
Leturcq, Renaud
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American Institute of Physics (AIP)
Abstract
We have investigated in-situ Si doping of InAs nanowires grown by molecular
beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed
by electrical measurements showing an increase of the electron density with the
Si flux. We also observe an increase of the electron density along the
nanowires from the tip to the base, attributed to the dopant incorporation on
the nanowire facets whereas no detectable incorporation occurs through the
seed. Furthermore the Si incorporation strongly influences the lateral growth
of the nanowires without giving rise to significant tapering, revealing the
complex interplay between axial and lateral growth.
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Keywords
Keywords: Dopant incorporation; Electrical measurement; Gold seeds; Inas nanowires; Lateral growth; n-Type doping; Si-doping; Carrier concentration; Electron density measurement; Epitaxial growth; Gold; Molecular beam epitaxy; Semiconductor doping; Silicon; Nanowir
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Applied Physics Letters
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Journal article
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