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Germanium-on-Insulator Fabricated by Ion Implantation and Dry Oxidation Technique

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dc.contributor.authorLuther-Davies, Barry
dc.contributor.authorKim, Tae-Hyun
dc.contributor.authorElliman, Robert
dc.contributor.authorChoi, Duk-Yong
dc.coverage.spatialPortland USA
dc.date.accessioned2015-12-07T22:48:15Z
dc.date.createdAugust 15-18 2011
dc.date.issued2011
dc.date.updated2016-02-24T11:18:56Z
dc.description.abstractGermanium-on-insulator (GeOI) is a promising platform for silicon-based photonics as well as microelectronics. In this work GeOI structures were produced by a modified Ge-condensation technique, in which Ge ions were implanted into a top silicon layer. Through an appropriate schedule of cyclic dry oxidation, a ∼20 nm thick, single crystalline Ge layer could be obtained. Structural investigation confirmed that the layer was fully-relaxed, which is desirable for the overgrowth of Ge and GaAs for photonic applications.
dc.identifier.isbn9781457715150
dc.identifier.urihttp://hdl.handle.net/1885/26413
dc.publisherIEEE Nanotechnology
dc.relation.ispartofseriesIEEE Conference on Nanotechnology (IEEE-NANO 2011)
dc.sourceProceedings of IEEE Conference on Nanotechnology (IEEE-NANO 2011)
dc.source.urihttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6144365&tag=1
dc.subjectKeywords: Dry oxidation; GaAs; Ge condensation; Germanium-on-insulator; Photonic application; Silicon based photonics; Silicon layer; Single-crystalline; Structural investigation; Condensation; Germanium; Microelectronics; Nanotechnology; Photonic devices; Photonic Germanium condensation; Germanium-on-insulator (GeOI); Ion implantation; photonic devices
dc.titleGermanium-on-Insulator Fabricated by Ion Implantation and Dry Oxidation Technique
dc.typeConference paper
local.bibliographicCitation.lastpage1672
local.bibliographicCitation.startpage1668
local.contributor.affiliationChoi, Duk-Yong, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLuther-Davies, Barry, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Tae-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidChoi, Duk-Yong, u4219275
local.contributor.authoruidLuther-Davies, Barry, u7601418
local.contributor.authoruidKim, Tae-Hyun, u3924901
local.contributor.authoruidElliman, Robert, u9012877
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020502 - Lasers and Quantum Electronics
local.identifier.ariespublicationu4695161xPUB44
local.identifier.doi10.1109/NANO.2011.6144365
local.identifier.scopusID2-s2.0-84858971929
local.type.statusPublished Version

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