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Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devices

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dc.contributor.authorNath, Shimul Kanti
dc.contributor.authorNandi, Sanjoy
dc.contributor.authorEl-Helou, Assaad E.
dc.contributor.authorLiu, Xinjun
dc.contributor.authorLi, Shuai
dc.contributor.authorRatcliff, Tom
dc.contributor.authorRaad, Peter
dc.contributor.authorElliman, Robert
dc.date.accessioned2022-02-16T04:17:02Z
dc.date.available2022-02-16T04:17:02Z
dc.date.issued2020
dc.date.updated2020-12-13T07:27:32Z
dc.description.abstractThe negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers on the contact resistance. Three distinct responses are observed under opposite polarity testing: bipolar S-type NDR, bipolar snap-back NDR, and combined S-type and snap-back NDR, depending on the stoichiometry of the oxide film and device area. In-situ thermoreflectance imaging is used to show that these NDR responses are associated with strong current localisation, thereby justifying the use of a previously developed two-zone, core shell thermal model of the device. The observed polarity dependent NDR responses, and their dependence on stoichiometry and area, are then explained by extending this model to include the effect of the polarity dependent contact resistance. This study provides an improved understanding of the NDR response of metal/oxide/metal structures and informs the engineering of devices for neuromorphic computing and non-volatile memory applications.en_AU
dc.description.sponsorshipThis work is partly funded by an Australian Research Council (ARC) Linkage Project (LP150100693) and Varian Semiconductor Equipment/Applied Materialsen_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn2331-7019en_AU
dc.identifier.urihttp://hdl.handle.net/1885/261203
dc.language.isoen_AUen_AU
dc.provenancehttps://v2.sherpa.ac.uk/id/publication/31470..."The Published Version can be archived in a Non-Commercial Institutional Repository" from SHERPA/RoMEO site (as at 16/02/2022)en_AU
dc.publisherAmerican Physical Societyen_AU
dc.relationhttp://purl.org/au-research/grants/arc/LP150100693en_AU
dc.rights© 2020 American Physical Societyen_AU
dc.sourcePhysical Review Applieden_AU
dc.titleSchottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx/Pt Cross-Point Devicesen_AU
dc.typeJournal articleen_AU
dcterms.accessRightsOpen Accessen_AU
local.bibliographicCitation.issue6en_AU
local.bibliographicCitation.lastpage10en_AU
local.bibliographicCitation.startpage1en_AU
local.contributor.affiliationNath, Shimul, College of Science, ANUen_AU
local.contributor.affiliationNandi, Sanjoy, College of Science, ANUen_AU
local.contributor.affiliationEl-Helou, Assaad E., Southern Methodist Universityen_AU
local.contributor.affiliationLiu, Xinjun, Tianjin Universityen_AU
local.contributor.affiliationLi, Shuai, College of Science, ANUen_AU
local.contributor.affiliationRatcliff, Tom, College of Engineering and Computer Science, ANUen_AU
local.contributor.affiliationRaad, Peter, Department of Mechanical Engineering, Southern Methodist Universityen_AU
local.contributor.affiliationElliman, Rob, College of Science, ANUen_AU
local.contributor.authoruidNath, Shimul, u5482854en_AU
local.contributor.authoruidNandi, Sanjoy, u4939839en_AU
local.contributor.authoruidLi, Shuai, u4748327en_AU
local.contributor.authoruidRatcliff, Tom, u4311306en_AU
local.contributor.authoruidElliman, Rob, u9012877en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090604 - Microelectronics and Integrated Circuitsen_AU
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivityen_AU
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciencesen_AU
local.identifier.absseo970109 - Expanding Knowledge in Engineeringen_AU
local.identifier.absseo970110 - Expanding Knowledge in Technologyen_AU
local.identifier.ariespublicationU4474173xPUB64en_AU
local.identifier.citationvolume13en_AU
local.identifier.doi10.1103/PhysRevApplied.13.064024en_AU
local.publisher.urlhttps://journals.aps.org/prapplied/en_AU
local.type.statusPublished Versionen_AU

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