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The effect of LPCVD silicon nitride deposition on the Si-SiO2 interface of oxidised silicon wafers

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dc.contributor.authorJin, Hao
dc.contributor.authorWeber, Klaus
dc.date.accessioned2015-12-07T22:53:45Z
dc.date.issued2007
dc.date.updated2015-12-07T12:42:47Z
dc.description.abstractLow-pressure chemical vapor deposition (LPCVD) of silicon nitride on thermally oxidized silicon wafers changes the fundamental properties of the Si- SiO2 interface as a result of nitridation of the interface. This change results in an increase in the recombination rate of minority carriers at the silicon surface. The ammonia to dichlorosilane flow ratio during nitride deposition is a key parameter which affects the extent of this change. In addition, the recombination properties of the Si- SiO2 interface following nitride deposition are also influenced by charge in the nitride layer and by a change in the degree of hydrogen passivation of interface defects.
dc.identifier.issn0013-4651
dc.identifier.urihttp://hdl.handle.net/1885/27868
dc.publisherElectrochemical Society Inc
dc.sourceJournal of the Electrochemical Society
dc.subjectKeywords: Chemical vapor deposition; Interfaces (materials); Pressure effects; Silanes; Silicon wafers; Dichlorosilane; Interface defects; Nitride deposition; Silicon surface; Silicon nitride
dc.titleThe effect of LPCVD silicon nitride deposition on the Si-SiO2 interface of oxidised silicon wafers
dc.typeJournal article
local.bibliographicCitation.issue1-4
local.bibliographicCitation.lastpageH8
local.bibliographicCitation.startpageH5
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.authoruidJin, Hao, u4065013
local.contributor.authoruidWeber, Klaus, u9116880
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.absseo850504 - Solar-Photovoltaic Energy
local.identifier.ariespublicationu4251866xPUB54
local.identifier.citationvolume154
local.identifier.doi10.1149/1.2382455
local.identifier.scopusID2-s2.0-33845245838
local.type.statusPublished Version

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