Passivation and depassivation of Si-SiO 2 interfaces with atomic hydrogen

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dc.contributor.authorZhang, Chun
dc.contributor.authorWeber, Klaus
dc.contributor.authorJin, Hao
dc.date.accessioned2015-12-10T22:41:03Z
dc.date.issued2009
dc.date.updated2016-02-24T11:00:35Z
dc.description.abstractThe influence of atomic hydrogen on the surface passivation of the Si-SiO2 interface is investigated. Inductively coupled photoconductivity decay measurements indicate an increase in carrier recombination at the surfaces following atomic hydrogen exposure, as measured by an increase in the emitter saturation current density. These defects are not thermally stable and are removed by subsequent thermal treatments above 300°C in N2. Atomic hydrogen results in the passivation of a certain fraction of thermally stable interface defects. However, the fraction of defects passivated is always slightly lower than can be achieved by exposure to molecular hydrogen. A variation in a sample temperature during atomic H exposure in the range of 25-400°C does not have a significant impact on the passivation efficiency.
dc.identifier.issn0013-4651
dc.identifier.urihttp://hdl.handle.net/1885/57720
dc.publisherElectrochemical Society Inc
dc.sourceJournal of the Electrochemical Society
dc.subjectKeywords: Atomic hydrogen; Carrier recombination; Depassivation; Emitter saturation current density; Inductively-coupled; Interface defects; Molecular hydrogen; Photoconductivity decay; Sample temperature; Significant impacts; Surface passivation; Thermal treatment
dc.titlePassivation and depassivation of Si-SiO 2 interfaces with atomic hydrogen
dc.typeJournal article
local.bibliographicCitation.issue11
local.bibliographicCitation.lastpageH840
local.bibliographicCitation.startpageH836
local.contributor.affiliationZhang, Chun, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationJin, Hao, College of Engineering and Computer Science, ANU
local.contributor.authoremailu9116880@anu.edu.au
local.contributor.authoruidZhang, Chun, u4386278
local.contributor.authoruidWeber, Klaus, u9116880
local.contributor.authoruidJin, Hao, u4065013
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090607 - Power and Energy Systems Engineering (excl. Renewable Power)
local.identifier.ariespublicationu4334215xPUB412
local.identifier.citationvolume156
local.identifier.doi10.1149/1.3223586
local.identifier.scopusID2-s2.0-70349730063
local.identifier.thomsonID000270457600064
local.identifier.uidSubmittedByu4334215
local.type.statusPublished Version

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