Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Chen, Z. B.; Lei, W.; Chen, B.; Wang, Y. B.; Liao, X. Z.; Zou, J.; Ringer, S. P.; Jagadish, C.; Tan, Hark Hoe

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Date

2014-01-15

Authors

Chen, Z. B.

Lei, W.

Chen, B.

Wang, Y. B.

Liao, X. Z.

Zou, J.

Ringer, S. P.

Jagadish, C.

Tan, Hark Hoe

Publisher

American Institute of Physics (AIP)

Abstract

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density.