Defect engineering in annealed n-type GaAs epilayers using SiO 2 /Si 3 N 4  stacking layers

Deenapanray, Prakash; Martin, Anthony H; Jagadish, Chennupati

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Defect engineering in annealed n-type GaAs epilayers using SiO 2 /Si 3 N 4 stacking layers

Date

2001

Authors

Deenapanray, Prakash

Martin, Anthony H

Jagadish, Chennupati

Publisher

American Institute of Physics (AIP)

URI

http://hdl.handle.net/1885/68349

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

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Cultural advice

Defect engineering in annealed n-type GaAs epilayers using SiO 2 /Si 3 N 4 stacking layers

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