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Electron and trap dynamics in As-ion-implanted and annealed GaAs

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Date

2001-03-19

Authors

Giniũnas, L.
Danielius, R.
Jagadish, C.
Adomavicius, R.
Krotkus, A.
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements.Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.

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Citation

URI

http://hdl.handle.net/1885/15879

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1356727

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