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Structural evolution of Ge 2 Sb 2 Te 5 films under the 488 nm laser irradiation

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dc.contributor.authorFu, Jing
dc.contributor.authorShen, Xiang
dc.contributor.authorXu, Yinsheng
dc.contributor.authorWang, Guoxiang
dc.contributor.authorNie, Qiuhua
dc.contributor.authorLin, Changgui
dc.contributor.authorDai, Shixun
dc.contributor.authorXu, Tiefeng
dc.contributor.authorWang, Rongping
dc.date.accessioned2015-12-13T22:17:15Z
dc.date.issued2012
dc.date.updated2016-02-24T09:00:07Z
dc.description.abstractGe 2Sb 2Te 5 films were locally crystallized by a tightly focused laser beam and the structural evolution was studied by Raman scatting. The marks recorded by a broad range of laser power were studied by optical microscope. Raman spectra of films with irradiation power of 0.1 mW and 1 mW were consistent with those of films annealed at 140°C and 400°C, respectively. It reveals that both the cubic and hexagonal crystalline phases have been achieved under the irradiation of 488 nm laser in amorphous Ge 2Sb 2Te 5 films. Specifically, the appearance of a new band of ∼141 cm -1 in films with irradiation power larger than 1.25 mW confirms that the over-irradiation causes the segregation of Te crystalline phase in films.
dc.identifier.issn0167-577X
dc.identifier.urihttp://hdl.handle.net/1885/71044
dc.publisherElsevier
dc.sourceMaterials Letters
dc.subjectKeywords: Crystalline phase; Hexagonal crystalline; Irradiation power; Laser power; Optical microscopes; Raman; Structural evolution; Tightly focused laser beam; XRD; Germanium; Irradiation; Microstructure; Phase transitions; Amorphous films Microstructure; Phase transformation; Raman; XRD
dc.titleStructural evolution of Ge 2 Sb 2 Te 5 films under the 488 nm laser irradiation
dc.typeJournal article
local.bibliographicCitation.lastpage151
local.bibliographicCitation.startpage148
local.contributor.affiliationFu, Jing, Ningbo University
local.contributor.affiliationShen, Xiang, Ningbo University
local.contributor.affiliationXu, Yinsheng, Ningbo University
local.contributor.affiliationWang, Guoxiang, Ningbo University
local.contributor.affiliationNie, Qiuhua, Ningbo University
local.contributor.affiliationLin, Changgui, Ningbo University
local.contributor.affiliationDai, Shixun, Ningbo University
local.contributor.affiliationXu, Tiefeng, Ningbo University
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidWang, Rongping, u4219061
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020500 - OPTICAL PHYSICS
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.ariespublicationf5625xPUB2528
local.identifier.citationvolume88
local.identifier.doi10.1016/j.matlet.2012.08.051
local.identifier.scopusID2-s2.0-84866621760
local.identifier.thomsonID000310423700042
local.type.statusPublished Version

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