Pure Boron Nitride Nanowires produced from Boron Triiodide
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Chen, Yong
Zhang, H Z
Chen, Ying
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Institute of Physics Publishing
Abstract
A thick layer of pure boron nitride (BN) nanowires with a uniform diameter of 20 nm was synthesized for the first time using a CVD process with a new precursor of boron triiodide (BI3). Transmission electron microscopy revealed a nanocrystalline structure in the BN nanowires and the absence of any catalyst particle. Some BN nanowires self-assembled into thick threads up to several hundred micrometres long on top of the nanowire layer. The nitriding reactions and lack of catalyst suggest new formation mechanisms of the BN nanowires.
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Nanotechnology
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2037-12-31
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