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Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers

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Date

1999

Authors

Jagadish, Chennupati
Lederer, Maximilian
Luther-Davies, Barry
Zou, Jin
Cockayne, David John Hugh
Haiml, M
Siegner, U
Keller, U
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

To shorten the response times of GaAs-based saturable absorber structures, arsenic ion implantation with thermal annealing was employed. Results showed that both the concentration and type of residual defects determines the ultimate shortening of the carrier lifetime. To eliminate amorphization, poor recrystallization and polycrystalline layers after annealing, high implantation doses should be avoided since the response time is increased under these conditions.

Description

Keywords

Keywords: Absorption; Amorphization; Annealing; Arsenic; Crystal defects; Crystallization; Ion implantation; Polycrystalline materials; Rutherford backscattering spectroscopy; Semiconductor growth; Substrates; Transmission electron microscopy; Cross-sectional trans

Citation

URI

http://hdl.handle.net/1885/93406

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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