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Characterization of dielectric layer, laser damage and edge recombination in miniature silicon solar cells

Date

Authors

Zin, Ngwe Soe

Blakers, Andrew

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Miniature silicon solar cells (8 × 2.0 mm2) are being fabricated for use in tandem-cell concentrator systems. Several factors combine to make the achievement of high efficiency problematical. These include surface, bulk and edge recombination. The latter

Keywords

Keywords: Bulk carrier; Concentrator systems; Dielectric layer; High efficiency; High-temperature annealing; High-temperature anneals; Laser scribing; Laser-induced damage and edge recombination; Lifetime degradation; LPCVD nitride; Measurement techniques; P-n junc Carrier lifetime degradation; Laser-induced damage and edge recombination; LPCVD nitride; QSSPC

URI

http://hdl.handle.net/1885/64215

Collections

ANU Research Publications

Source

Proceedings of PVSC 2010

Type

Conference paper

DOI

10.1109/PVSC.2010.5614454

Restricted until

2037-12-31

Downloads

File

Description

01_Zin_Characterization_of_dielectric_2010.pdf (929.95 KB)

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