Characterization of dielectric layer, laser damage and edge recombination in miniature silicon solar cells
Date
2010
Authors
Zin, Ngwe Soe
Blakers, Andrew
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
Miniature silicon solar cells (8 × 2.0 mm2) are being fabricated for use in tandem-cell concentrator systems. Several factors combine to make the achievement of high efficiency problematical. These include surface, bulk and edge recombination. The latter
Description
Keywords
Keywords: Bulk carrier; Concentrator systems; Dielectric layer; High efficiency; High-temperature annealing; High-temperature anneals; Laser scribing; Laser-induced damage and edge recombination; Lifetime degradation; LPCVD nitride; Measurement techniques; P-n junc Carrier lifetime degradation; Laser-induced damage and edge recombination; LPCVD nitride; QSSPC
Citation
Collections
Source
Proceedings of PVSC 2010
Type
Conference paper
Book Title
Entity type
Access Statement
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Restricted until
2037-12-31
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