Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
Date
2012
Authors
Kim, Jung Hyuk
Moon, So Ra
Kim, Yong
Chen, Zhi Gang
Zou, Jin
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe
Choi, Duk-Yong
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Volume Title
Publisher
Institute of Physics Publishing
Abstract
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated.
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Keywords
Keywords: Epitaxially grown; Germanium nanowires; Nano-bridges; Reactant gas; Side walls; Silicon substrates; Two-temperature; Chemical vapor deposition; Epitaxial growth; Germanium; Nanowires
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Source
Nanotechnology
Type
Journal article
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Restricted until
2037-12-31
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