Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure
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Hu, Zhongqiang
Li, Qian
Li, Meiya
Wang, Qiangwen
Zhu, Yongdan
Liu, Xiaolian
Zhao, Xingzhong
Liu, Yun
Dong, Shuxiang
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American Institute of Physics
Abstract
We report a continuously tunable resistive switching behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 10⁵% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO₃/Nb-doped SrTiO₃ interface.
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Applied Physics Letters
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