Patterning of silicon by indentation and chemical etching
Date
2007-09-20
Authors
Rao, R.
Bradby, J. E.
Williams, J. S.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
An array of features on Si 100 is fabricated by a new maskless pattering process involving a
combination of indentation and anisotropic wet chemical etching. Indentation is carried out in order
to induce transformation to the high-pressure phases, Si III and Si XII, before etching in a KOH
solution. The pressure-induced phases are found to be highly resistant to etching in the KOH
solution, with an etch rate more than an order of magnitude slower than that of Si 100. The
possibility of exploiting this mechanism for a maskless nanoscale patterning process in Si using
indentation is discussed.
Description
Keywords
Keywords: Indentation; Phase transitions; Wet etching; Nanoscale patterning; Silicon
Citation
Collections
Source
Applied Physics Letters
Type
Journal article