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Photocarrier lifetime and transport in silicon supersaturated with sulfur

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dc.contributor.authorPersans, Peter D.
dc.contributor.authorBerry, Nathaniel E.
dc.contributor.authorRecht, Daniel
dc.contributor.authorHutchinson, David
dc.contributor.authorPeterson, Hannah
dc.contributor.authorClark, Jessica
dc.contributor.authorCharnvanichborikarn, Supakit
dc.contributor.authorWilliams, James S.
dc.contributor.authorDiFranzo, Anthony
dc.contributor.authorAziz, Michael J.
dc.contributor.authorWarrender, Jeffrey M.
dc.date.accessioned2015-09-22T00:18:14Z
dc.date.available2015-09-22T00:18:14Z
dc.date.issued2012
dc.date.updated2016-02-24T09:05:35Z
dc.description.abstractDoping of silicon-on-insulator layers with sulfur to concentrations far above equilibrium by ion implantation and pulsed laser melting can result in large concentration gradients. Photocarriers generated in and near the impurity gradient can separate into different coplanar transport layers, leading to enhanced photocarrier lifetimes in thin silicon-on-insulator films. The depth from which holes escape the heavily doped region places a lower limit on the minority carrier mobility-lifetime product of 10⁻⁸ cm²/V for heavily sulfur dopedsilicon. We conclude that the cross-section for recombination through S impurities at this concentration is significantly reduced relative to isolated impurities.
dc.description.sponsorshipResearch at Rensselaer was supported by the Army Research Office under Contract No. W911NF0910470 and by the NSF REU program at Rensselaer. Research at Harvard was supported by US Army ARDEC under Contract No. W15QKN-07-P-0092. D.R. was supported in part by a National Defense Science and Engineering Graduate fellowship.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15617
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 22/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.4746752
dc.sourceApplied Physics Letters
dc.subjectKeywords: Concentration gradients; Doped silicon; Heavily doped; Laser melting; Lower limits; Minority carrier; Mobility-lifetime products; Photo-carriers; Photocarrier lifetimes; Silicon on insulator; Transport layers; Impurities; Ion implantation; Photoelectricit
dc.titlePhotocarrier lifetime and transport in silicon supersaturated with sulfur
dc.typeJournal article
local.bibliographicCitation.issue11en_AU
local.bibliographicCitation.startpage111105en_AU
local.contributor.affiliationPersans, Peter D, Rensselaer Polytechnic Institute, United States of Americaen_AU
local.contributor.affiliationBerry, Nathaniel E, Rensselaer Polytechnic Institute, United States of Americaen_AU
local.contributor.affiliationRecht, Daniel, Harvard University, United States of Americaen_AU
local.contributor.affiliationHutchinson, David, Rensselaer Polytechnic Institute, United States of Americaen_AU
local.contributor.affiliationPeterson, Hannah, Rensselaer Polytechnic Institute, United States of Americaen_AU
local.contributor.affiliationClark, Jessica, Rensselaer Polytechnic Institute, United States of Americaen_AU
local.contributor.affiliationCharnvanichborikarn, Supakit, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationDi Franzo, Anthony, Rensselaer Polytechnic Institute, United States of Americaen_AU
local.contributor.affiliationAziz, Michael, Harvard University, United States of Americaen_AU
local.contributor.affiliationWarrender, Jeffrey M., US Army, United States of Americaen_AU
local.contributor.authoruidu3251081en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor030600en_AU
local.identifier.ariespublicationf5625xPUB3081en_AU
local.identifier.citationvolume101en_AU
local.identifier.doi10.1063/1.4746752en_AU
local.identifier.scopusID2-s2.0-84866339170
local.identifier.thomsonID000309329300005
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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