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Application of NaYF₄:Er³⁺ up-converting phosphors for enhanced near-infrared silicon solar cell response

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dc.contributor.authorShalav, A.
dc.contributor.authorRichards, B. S.
dc.contributor.authorTrupke, T.
dc.contributor.authorKrämer, K. W.
dc.contributor.authorGüdel, H. U.
dc.date.accessioned2015-12-04T03:36:13Z
dc.date.available2015-12-04T03:36:13Z
dc.date.issued2005-12-28
dc.description.abstractErbium-doped sodium yttrium fluoride (NaYF₄:Er³⁺) up-conversion phosphors were attached to the rear of a bifacial silicon solar cell to enhance its reponsivity in the near-infrared. The incident wavelength and light intensity were varied and the resulting short circuit current of the solar cell was measured. A close match between the spectral features of the external quantum efficiency and the phosphor absorption is consistent with the energy transfer up-conversion process. The peak external quantum efficiency of the silicon solar cell was measured to be (2.5±0.2)% under 5.1 mW laser excitation at 1523 nm, corresponding to an internal quantum efficiency of 3.8%.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/17011
dc.publisherAmerican Institute of Physics (AIP)en_AU
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 4/12/15). Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1844592en_AU
dc.sourceApplied Physics Lettersen_AU
dc.titleApplication of NaYF₄:Er³⁺ up-converting phosphors for enhanced near-infrared silicon solar cell responseen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue1en_AU
local.bibliographicCitation.startpage013505en_AU
local.contributor.affiliationShalav, Avi, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRichards, Bryce, Heriot-Watt University, United Kingdomen_AU
local.contributor.affiliationTrupke, Thorsten, University of New South Wales, Australiaen_AU
local.contributor.affiliationKramer, K.W., University of Bern, Switzerlanden_AU
local.contributor.affiliationGudel, H. U., University of Bern, Switzerlanden_AU
local.contributor.authoruidu4479768en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090699en_AU
local.identifier.ariespublicationu4479768xPUB8en_AU
local.identifier.citationvolume86en_AU
local.identifier.doi10.1063/1.1844592en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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