Efficient point defect engineered si light-emitting diode at 1.218 μm
Date
2007
Authors
Bao, Jiming
Tabbal, Malek
Kim, Taegon
Charnvanichborikarn, Supakit
Williams, James
Aziz, Michael
Capasso, Federico
Journal Title
Journal ISSN
Volume Title
Publisher
Optical Society of America
Abstract
We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.
Description
Keywords
Keywords: Computer networks; Electromagnetic waves; Light emission; Light emitting diodes; Point defects; Quantum electronics; Semiconducting silicon compounds; Silicon; Defect engineering; Internal quantum efficiency; Laser science; State-of-the-art technologies;
Citation
Collections
Source
CLEO/QELS 07 Technical Digest CD-ROM
Type
Conference paper