Efficient point defect engineered si light-emitting diode at 1.218 μm

Date

2007

Authors

Bao, Jiming
Tabbal, Malek
Kim, Taegon
Charnvanichborikarn, Supakit
Williams, James
Aziz, Michael
Capasso, Federico

Journal Title

Journal ISSN

Volume Title

Publisher

Optical Society of America

Abstract

We have demonstrated a Si LED with an internal quantum efficiency ∼ 10 % using a novel approach to enhance light emission based on point defect engineering, which uses state-of-the art technology.

Description

Keywords

Keywords: Computer networks; Electromagnetic waves; Light emission; Light emitting diodes; Point defects; Quantum electronics; Semiconducting silicon compounds; Silicon; Defect engineering; Internal quantum efficiency; Laser science; State-of-the-art technologies;

Citation

URI

http://hdl.handle.net/1885/18571

Collections

ANU Research Publications

Source

CLEO/QELS 07 Technical Digest CD-ROM

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/QELS.2007.4431330

Restricted until

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