Simplified PERC solar cells passivated with PECVD silicon nitride

dc.contributor.authorKerr, Mark Johnen_US
dc.contributor.authorSchmidt, Janen_US
dc.contributor.authorSamundsett, Cen_US
dc.contributor.authorCuevas, Andresen_US
dc.coverage.spatialGlasgow, Scotlanden_US
dc.coverage.temporal1-5 May 2000en_US
dc.date.accessioned2003-08-14en_US
dc.date.accessioned2004-05-19T13:02:29Zen_US
dc.date.accessioned2011-01-05T08:29:43Z
dc.date.available2004-05-19T13:02:29Zen_US
dc.date.available2011-01-05T08:29:43Z
dc.date.created2000en_US
dc.date.issued2000en_US
dc.description.abstractStoichiometric plasma enhanced chemical vapor deposited silicon nitride films have been used to passivate the front and rear surface of simplified PERC silicon solar cells. These films have the distinctive properties that they can provide excellent surface passivation, are easily patterned using photolithography and wet chemical etching, and are compatible with aluminium layers for a back surface optical reflector. Cells with planar surfaces and random pyramid texturing have been fabricated. Open circuit voltages up to 667mV have been measured on float-zone substrates and 655mV on multicrystalline material, proving the outstanding surface passivation provided by the silicon nitride films. Conversion efficiencies of 18.5% and 16.1% have been obtained respectively.en_US
dc.format.extent91654 bytesen_US
dc.format.extent364 bytesen_US
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/octet-streamen_US
dc.identifier.urihttp://hdl.handle.net/1885/40857en_US
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/1885/40857
dc.language.isoen_AUen_US
dc.relation.ispartofseries16th European Photovoltaic Solar Energy Conferenceen_US
dc.subjectsilicon-nitrideen_US
dc.subjectpassivationen_US
dc.subjectc-Sien_US
dc.titleSimplified PERC solar cells passivated with PECVD silicon nitrideen_US
dc.typeConference paperen_US
local.description.refereednoen_US
local.identifier.citationyear2000en_US
local.identifier.eprintid1857en_US
local.rights.ispublishedyesen_US

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