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Precipitation of interstitial iron in multicrystalline silicon

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Date

2014

Authors

Liu, An Yao
MacDonald, Daniel

Journal Title

Journal ISSN

Volume Title

Publisher

Scientific.Net

Abstract

The internal gettering of iron in silicon via iron precipitation at low processing temperatures is known to improve solar cell efficiencies. Studies have found that the optimal temperature lies in the range of 500°C-600°C. In this paper, we present expe

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Keywords

Citation

URI

http://hdl.handle.net/1885/82718

Collections

ANU Research Publications

Source

Solid State Phenomena

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.4028/www.scientific.net/SSP.205-206.34

Restricted until

2037-12-31

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