Crystal phase engineering in single InAs nanowires
Date
2010
Authors
Dick, Kimberley A.
Thelander, Claes
Samuelson, Lars
Caroff, Philippe
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Volume Title
Publisher
American Chemical Society
Abstract
Achieving phase purity and control in III-V nanowires is a necessity for future nanowire-based device applications. Many works have focused on cleaning specific crystal phases of defects such as twin planes and stacking faults, using parameters such as diameter, temperature, and impurity incorporation. Here we demonstrate an improved method for crystal phase control, where crystal structure variations in single InAs nanowires are designed with alternating wurtzite (WZ) and zinc blende (ZB) segments of precisely controlled length and perfect interfaces. We also demonstrate the inclusion of single twin planes and stacking faults with atomic precision in their placement, designed ZB quantum dots separated by thin segments of WZ, acting as tunnel barriers for electrons, and structural superlattices (polytypic and twin plane). Finally, we present electrical data to demonstrate the applicability of these designed structures to investigation of fundamental properties. From electrical measurements we observe clear signatures of controlled structural quantum dots in nanowires. This method will be directly applicable to a wide range of nanowire systems.
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Keywords
Keywords: Atomic precision; Crystal phase; Crystal phase control; Crystal phasis; Crystal structure variation; Device application; Electrical data; Electrical measurement; Fundamental properties; Improved methods; Impurity incorporation; InAs; Phase purity; Quantum crystal structure; electron microscopy; InAs; Nanowire; wurtzite; zinc blende
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Source
Nano Letters
Type
Journal article
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2037-12-31
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