Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Thumbnail Image

Date

2017

Authors

Rougieux, Fiacre
Nguyen, Hieu
MacDonald, Daniel
Mitchell, Bernhard
Falster, Robert J.

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally, we demonstrate the impact of nonequilibrium point defect concentrations on precipitate and dislocation growth

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/218080

Collections

ANU Research Publications

Source

IEEE Journal of Photovoltaics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/JPHOTOV.2017.2678840

Restricted until

DSpace software copyright © 2002-2026 LYRASIS