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Exciton localization in inhomogeneously broadened ZnO/MgxZn1−xO quantum wells

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Date

2010-06-25

Authors

Ashrafi, Almamun

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Publisher

American Institute of Physics (AIP)

Abstract

Exciton localization in ZnO/MgxZn1−xOquantum wells(QWs) has been investigated systematically with various ZnO well widths for the fixed Mg0.23Zn0.77O barrier height. A strong exciton confinement is observed with an implicit dependence on the built-in electric field which is calculated to be 0.37 MV/cm. The exciton-phonon coupling strength varied significantly depending upon the degrees of exciton localization with the activation energy of 18–29 meV. The relaxation mechanism in ZnO/Mg0.23Zn0.77OQWs starts to dominate when the exciton localization energy is above the thermal energy, kBT. The band characteristics and strong exciton localization in ZnO/Mg0.23Zn0.77OQWs are attributed to the potential fluctuations associated with the inhomogeneous broadening, represented by the schematics.

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Keywords

Keywords: Band characteristics; Barrier heights; Exciton confinement; Exciton localization; Exciton-phonon couplings; Inhomogeneous broadening; Potential fluctuations; Quantum well; Relaxation mechanism; Well width; ZnO; Activation energy; Electric fields; Excitons

Citation

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http://hdl.handle.net/1885/15545

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ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

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DOI

10.1063/1.3452379

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