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Direct observation of voids in the vacancy excess region of ion bombarded silicon

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dc.contributor.authorWilliams, J. S.
dc.contributor.authorConway, M. J.
dc.contributor.authorWilliams, B. C.
dc.contributor.authorWong-Leung, Jennifer
dc.date.accessioned2015-10-14T04:57:29Z
dc.date.available2015-10-14T04:57:29Z
dc.date.issued2001-05-07
dc.date.updated2015-12-10T11:11:48Z
dc.description.abstractThe results reported in this letter indicate that the spatial separation of the vacancy and interstitial excesses which result from ion bombardment gives rise to stable voids upon annealing at 850 °C even for implants where the projected ion range is only of the order of a few thousand Ångstrom. Such voids have been observed directly by transmission electron microscopy. Furthermore, in cases where both voids and interstitial-based defects are present at different depths, it is found that Au has a strong preference for decorating void surfaces and hence Au can, indeed, be used as a selective detector of open volume defects in Si.
dc.description.sponsorshipOne of the authors ~J.W.-L.! acknowledges the Australian Research Council for financial support.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15919
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1352662
dc.sourceApplied Physics Letters
dc.titleDirect observation of voids in the vacancy excess region of ion bombarded silicon
dc.typeJournal article
local.bibliographicCitation.issue19en_AU
local.bibliographicCitation.lastpage2869en_AU
local.bibliographicCitation.startpage2867en_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationConway, Martin, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, Ben C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu8809701en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020204en_AU
local.identifier.ariespublicationMigratedxPub1732en_AU
local.identifier.citationvolume78en_AU
local.identifier.doi10.1063/1.1352662en_AU
local.identifier.scopusID2-s2.0-0035820953
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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