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Hot Electron Injection Laser controlled carrier-heating induced gain switching

Date

Authors

Hoskens, R C P

van de Roer, T G

Smalbrugge, E

Kwaspen, J J M

Tolstikhin, V I

Jagadish, Chennupati

Acket, G A

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The novel Hot Electron Injection Laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show the

Keywords

Keywords: Civil aviation; Current density; Electron injection; Electrons; Epitaxial growth; Heating; Hot carriers; Hot electrons; Injection lasers; Lasers; Leakage currents; Molecular beam epitaxy; Pulsed laser deposition; Semiconductor lasers; Thermal noise; activ Carrier heating; Chirp; Direct modulation; Heterojunction bipolar transistor; Hot electrons; Laser diode; Ultrafast modulation

URI

http://hdl.handle.net/1885/82653

Collections

ANU Research Publications

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

DOI

10.1109/COMMAD.2004.1577573