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Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Date

Authors

Paiman, Suriati

Gao, Qiang

Joyce, Hannah J

Jagadish, Chennupati

Kim, Yong

Guo, Y.

Zou, Jin

Tan, Hark Hoe

Publisher

IEEE

Abstract

Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and

Keywords

Keywords: Blue-shifted; Emission energies; Emission wavelength; Growth conditions; Growth parameters; InP; Metalorganic chemical vapor deposition; Microphotoluminescence; Temperature increase; Temperature range; V/III ratio; Wurtzites; Zinc-blende; Catalysis; Growt

URI

http://hdl.handle.net/1885/83565

Collections

ANU Research Publications

Source

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Type

Conference paper

DOI

10.1109/COMMAD.2010.5699767

Restricted until

2037-12-31

Downloads

File

Description

01_Paiman_Au-catalyzed_InP_nanowires:_2010.pdf (546.43 KB)