Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy
dc.contributor.author | Ye, J. D. | |
dc.contributor.author | Pannirselvam, S. | |
dc.contributor.author | Lim, S. T. | |
dc.contributor.author | Bi, J. F. | |
dc.contributor.author | Sun, X. W. | |
dc.contributor.author | Lo, G. Q. | |
dc.contributor.author | Teo, K. L. | |
dc.date.accessioned | 2015-09-17T01:44:54Z | |
dc.date.available | 2015-09-17T01:44:54Z | |
dc.date.issued | 2010 | |
dc.date.updated | 2015-12-10T09:26:30Z | |
dc.description.abstract | We report the formation of two-dimensional electron gas 2DEG at the Zn1−xMgxO/ZnO interface grown by metal-organic vapor phase epitaxy on sapphire substrates. The existence of the 2DEG is confirmed by the observation of Shubnikov–de Haas oscillations and the integer quantum Hall effect. In particular, the Zn0.8Mg0.2O/ZnO heterostructure shows a high Hall mobility of 2138 cm2 /V s with a carrier sheet density of 3.511012 cm−2 at 1.4 K. We attribute the origin of 2DEG to be the donor states on ZnMgO surface. The dependence of carrier sheet density of 2DEG on ZnMgO layer thickness and Mg composition x are also investigated. | |
dc.description.sponsorship | This work was supported by the Singapore Agency for Science, Technology, and Research A*STAR, under SERC Grant No. 0521260095 and Infuse Project No. I01-0911-06. | en_AU |
dc.identifier.issn | 0003-6951 | en_AU |
dc.identifier.uri | http://hdl.handle.net/1885/15503 | |
dc.publisher | American Institute of Physics | |
dc.rights | Publishers version/PDF may be used on author's personal website, institutional website or institutional repository http://www.sherpa.ac.uk/romeo/issn/0003-6951 Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at 10.1063/1.3489101 | |
dc.source | Applied Physics Letters | |
dc.subject | Two-dimensional electron gas | |
dc.subject | Zn-polar ZnMgO/ZnO | |
dc.subject | heterostructure | |
dc.subject | metal-organic vapor phase epitaxy | |
dc.title | Two-dimensional electron gas in Zn-polar ZnMgO/ZnO heterostructure grown by metal-organic vapor phase epitaxy | |
dc.type | Journal article | |
local.bibliographicCitation.issue | 11 | en_AU |
local.bibliographicCitation.lastpage | 111908.3 | |
local.bibliographicCitation.startpage | 111908 | en_AU |
local.contributor.affiliation | Ye, J D, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.affiliation | Ye, J D, Institute of Microelectronics, Singapore | en_AU |
local.contributor.affiliation | Pannirselvam, S, National University of Singapore, Singapore | en_AU |
local.contributor.affiliation | Lim, S, National University of Singapore, Singapore | en_AU |
local.contributor.affiliation | Bi, J F, Department of Electrical and Computer Engineering, National University of Singapore, Singapore | en_AU |
local.contributor.affiliation | Sun, X W, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore | en_AU |
local.contributor.affiliation | Lo, G Q, Institute of Microelectronics, Singapore | en_AU |
local.contributor.affiliation | Teo, K L, Department of Electrical and Computer Engineering, National University of Singapore, Singapore | en_AU |
local.contributor.authoruid | Ye, Jiandong, u4920827 | en_AU |
local.description.notes | Imported from ARIES | en_AU |
local.identifier.absfor | 020299 | en_AU |
local.identifier.ariespublication | f2965xPUB868 | en_AU |
local.identifier.citationvolume | 97 | en_AU |
local.identifier.doi | 10.1063/1.3489101 | en_AU |
local.identifier.scopusID | 2-s2.0-77956847762 | |
local.identifier.uidSubmittedBy | u3488905 | en_AU |
local.type.status | Published Version | en_AU |
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