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Synthesis of nickel disilicide quantum dots in silicon dioxide films

Date

Authors

Yoon, Jong-Hwan

Elliman, Robert

Publisher

Elsevier

Abstract

Nickel disilicide (NiS2) quantum dots (QDs) have been grown in silicon-rich oxide (SiOx) films by either ion implanting with nickel or coating with an evaporated Ni film and annealing at 1100 °C. It is shown that both techniques produce well-defined sing

Keywords

Keywords: Nickel concentration; Nickel disilicide; Silicon dioxide films; Silicon-rich oxide films; Nickel compounds; Oxide films; Silica; Single crystals; Semiconductor quantum dots; nickel complex; nickel disilicide; quantum dot; silicon dioxide; unclassified dru Nickel disilicide; Quantum dot; Silicon dioxide

URI

http://hdl.handle.net/1885/35997

Collections

ANU Research Publications

Source

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Type

Journal article

DOI

10.1016/j.colsurfa.2007.05.043

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