EXAFS Comparison of Crystalline/Continuous and Amorphous/Porous GaSb
Date
2005
Authors
Kluth, Susan
Johannessen, Bernt
Kluth, Patrick
Glover, Christopher
Foran, Garry J
Ridgway, Mark C
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Volume Title
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Elsevier
Abstract
Ion irradiation of GaSb yields not only amorphization but also causes the material to become porous. For this report, GaSb has been irradiated to a dose sufficient to yield a porous network comprised of 15 nm wide rods. The local structure has been determined by EXAFS and compared with that of a polycrystalline standard. Significant Ga2O3 formation is observed along with Sb-Sb bonding far in excess of the homopolar bonding observed in other amorphous III-V semiconductors.
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Keywords
Keywords: Amorphization; Amorphous materials; Antimony alloys; Crystalline materials; Ion implantation; Polycrystalline materials; Porous materials; Semiconductor materials; EXAFS; GaSb; Homopolar bonding; Porous semiconductors; Gallium alloys Amorphisation; EXAFS; GaSb; Ion implantation; Porous semiconductors
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Nuclear Instruments and Methods in Physics Research: Section B
Type
Journal article
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2037-12-31
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