Gold-free growth of GaAs nanowires on silicon: Arrays and polytypism
Date
2010
Authors
Plissard, Sebastien
Dick, Kimberley A.
Larrieu, Guilhem
Godey, Sylvie
Addad, Ahmed
Wallart, Xavier
Caroff, Philippe
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Volume Title
Publisher
Institute of Physics Publishing
Abstract
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
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Keywords
Keywords: Crystal qualities; Dielectric layer; Gaas nanowires; Hole arrays; Polytypism; Precise positioning; Pure zinc; Single nanowires; Structural characterization; Transition regions; V/III ratio; Wurtzites; Crystal structure; Epitaxial growth; Gallium alloys; G
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Source
Nanotechnology
Type
Journal article
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2037-12-31
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