Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping

Date

2015

Authors

Wang, Fan
Gao, Qiang
Peng, Kun
Li, Zhe
Li, Ziyuan
Guo, Yanan
Fu, Lan
Smith, Leigh Morris
Jagadish, Chennupati
Tan, Hark Hoe

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Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and internal quantum efficiency along the length of the nanowires. Using this method, the doping concentration of single Si-doped wurtzite InP nanowires are mapped out and confirmed by the electrical measurements of single nanowire devices. Our method has important implication for single nanowire detectors and LEDs and nanowire solar cells applications.

Description

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Citation

Source

Nano Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1021/nl504929n

Restricted until

2037-12-31