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Dynamic Annealing in III-Nitrides Under Ion Bombardment

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Date

2004

Authors

Kucheyev, Sergei
Williams, James
Zou, Jin
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The damage buildup behavior in AlxGa1-xN films bombarded with kilo-electron-volt heavy ions at 77 and 300 K was studied. Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy were used for the study. It was found that the damage buildup behavior at 300 K was essentially similar for all the AlGaN films studied. The results show that an increase in Al content changes the main features of the amorphization behavior and strongly enhances dynamic annealing processes.

Description

Keywords

Keywords: Channeling spectrometry; Lattice disorder; Aluminum; Aluminum compounds; Amorphization; Annealing; Chemical vapor deposition; Crystal defects; Free energy; Heavy ions; Ion bombardment; Ion implantation; Phase transitions; Rutherford backscattering spectro

Citation

URI

http://hdl.handle.net/1885/80391

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1649459

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