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Role of Stress on Impurity Free Disordering of Quantum Dots

Date

Authors

Barik, Satyanarayan

Fu, Lan

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.

Keywords

Keywords: Dielectric layers; Diffusion of vacancies; GaAs; Impurity free disordering; Inp; Interdiffusion models; Interstitials; Quantum dot intermixing; Quantum dots; Stress-induced; Model structures; Optical waveguides; Silicon compounds; Semiconductor quantum do Impurity free disordering; Quantum dot intermixing; Stress

URI

http://hdl.handle.net/1885/38749

Collections

ANU Research Publications

Source

Proceedings of 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)

Type

Conference paper

DOI

10.1109/COMMAD.2008.4802131