Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

Abstract

Highly c-axis oriented ZnOthin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10–50 mTorr) and oxygen percentage (50–100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from −1 × 10¹¹ to −2 × 10⁸ dyne/cm² that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputteringpressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnOthin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnOthin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnOfilm.