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The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

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Date

2005

Authors

MacDonald, Daniel
Deenapanray, Prakash
Cuevas, Andres
Diez, Stephan
Glunz, Stefan

Journal Title

Journal ISSN

Volume Title

Publisher

Scientific.Net

Abstract

Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually triggered by illumination. Despite its importance in photovoltaic materials, the chemical make-up of the defect remains

Description

Keywords

Keywords: Boron-oxygen defects; Crystalline silicon; Czochralski; Silicon interstitials; Boron; Crystal growth from melt; Crystalline materials; Ion implantation; Photovoltaic cells; Silicon; Defects Boron-oxygen defect; Crystalline silicon; Czochralski; Silicon interstitial

Citation

URI

http://hdl.handle.net/1885/81311

Collections

ANU Research Publications

Source

Solid State Phenomena

Type

Journal article

Book Title

Entity type

Access Statement

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DOI

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