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Swift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors

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dc.contributor.authorSchnohr, Claudia
dc.contributor.authorKluth, Patrick
dc.contributor.authorGiulian, Raquel
dc.contributor.authorLlewellyn, David
dc.contributor.authorByrne, Aidan
dc.contributor.authorCookson, D J
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-08T22:35:38Z
dc.date.issued2010
dc.date.updated2015-12-08T09:43:21Z
dc.description.abstractDamage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50 In0.50 P and Ga0.47 In0.53 As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50 In0.50 P are readily amorphized, GaP and GaAs remain almost undamaged and InAs and Ga0.47 In0.53 As exhibit intermediate behavior. A material-dependent combination of irradiation-induced damage formation and annealing is proposed to describe the different responses of the III-V materials to electronic energy loss.
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1885/34957
dc.publisherAmerican Physical Society
dc.sourcePhysical Review B: Condensed Matter and Materials
dc.titleSwift-heavy-ion-induced damage formation in III-V binary and ternary semiconductors
dc.typeJournal article
local.bibliographicCitation.issue7
local.bibliographicCitation.startpage9
local.contributor.affiliationSchnohr, Claudia, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKluth, Patrick, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGiulian, Raquel, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLlewellyn, David, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationByrne, Aidan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationCookson, D J, Australian Synchrotron Research Program
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidSchnohr, Claudia, u4276263
local.contributor.authoruidKluth, Patrick, u4054452
local.contributor.authoruidGiulian, Raquel, u4174583
local.contributor.authoruidLlewellyn, David, u7400676
local.contributor.authoruidByrne, Aidan, u8900906
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020202 - Nuclear Physics
local.identifier.ariespublicationf2965xPUB119
local.identifier.citationvolume81
local.identifier.doi10.1103/PhysRevB.81.075201
local.identifier.scopusID2-s2.0-77954848690
local.identifier.thomsonID000274998200056
local.type.statusPublished Version

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