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Radiative recombination in p-type delta doped layers in GaAs

dc.contributor.authorZhao, Q X
dc.contributor.authorWillander, M
dc.contributor.authorHoltz, P
dc.contributor.authorLu, W
dc.contributor.authorDou, H
dc.contributor.authorShen, S
dc.contributor.authorLi, Gang
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2015-12-13T23:34:19Z
dc.date.available2015-12-13T23:34:19Z
dc.date.issued1999
dc.date.updated2015-12-12T09:35:34Z
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/1885/93409
dc.publisherAmerican Physical Society
dc.sourcePhysical Review B
dc.titleRadiative recombination in p-type delta doped layers in GaAs
dc.typeJournal article
local.bibliographicCitation.lastpageR2196
local.bibliographicCitation.startpageR2193
local.contributor.affiliationZhao, Q X, Gotenburg University
local.contributor.affiliationWillander, M, Gotenburg University
local.contributor.affiliationHoltz, P, Linkoping University
local.contributor.affiliationLu, W, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDou, H, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationShen, S, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidLu, W, u931508
local.contributor.authoruidDou, H, u990657
local.contributor.authoruidShen, S, u2530537
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub24751
local.identifier.citationvolume60
local.type.statusPublished Version

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