Conducting Properties of Planar Irradiated and Pristine Silicon-fullerite-metal Structures

Berdinsky, A.S.; Fink, Dietmar; Yoo, J B; Chun, H.G.; Chadderton, Lewis; Petrov, A V

Conducting Properties of Planar Irradiated and Pristine Silicon-fullerite-metal Structures

Date

2005

Authors

Berdinsky, A.S.

Fink, Dietmar

Yoo, J B

Chun, H.G.

Chadderton, Lewis

Petrov, A V

Publisher

Springer

Abstract

Au/C60/p-Si sandwich structures can be easily obtained by evaporation of a thin fullerite (C60) film on a silicon substrate and a thin Au film on top of the C60 film. In this case a C 60/p-Si p-n heterojunction appears. Both the dark and photoconductivities of the planar pristine and irradiated Au/C60/p-Si structures were measured as a function of the irradiation fluence. Furthermore, the pressure dependence of these structures was determined. A strong dependence on the irradiation damage was found.