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Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

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Date

2010-03-22

Authors

Plissard, S.
Dick, K. A.
Wallart, X.
Caroff, P.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics

Abstract

Growth of GaAs/GaAsSb heterostructurenanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAsnanowires is first obtained, and then GaAsₓSb₁ˍₓ segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAsnanowire and passivated using an AlₓGa₁ˍₓAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.

Description

Keywords

Keywords: GaAs; Gold seeds; Heterostructures; Twin planes; Gallium alloys; Gallium arsenide; Nanowires; Stacking faults; Semiconducting gallium

Citation

URI

http://hdl.handle.net/1885/15708

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.3367746

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