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Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

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dc.contributor.authorRoth, T.
dc.contributor.authorRosenits, P.
dc.contributor.authorDiez, S.
dc.contributor.authorGlunz, S. W.
dc.contributor.authorMacdonald, D.
dc.contributor.authorBeljakowa, S.
dc.contributor.authorPensl, G.
dc.date.accessioned2015-12-01T05:51:06Z
dc.date.available2015-12-01T05:51:06Z
dc.date.issued2007-11-28
dc.date.updated2015-12-09T09:38:22Z
dc.description.abstractBoron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy(DLTS), injection-dependent lifetime spectroscopy, and temperature-dependent lifetime spectroscopy. While DLTSmeasurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitialmanganese and manganese-boron pairs were found to coexist, and their defect parameters have been investigated.
dc.description.sponsorshipOne of the authors T.R. gratefully acknowledges a scholarship of the German Federal Environmental Foundation Deutsche Bundesstiftung Umwelt. Another D.M. is supported by an Australian Research Council QEII Fellowship.en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16945
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 1/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2812698
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Boron; Deep level transient spectroscopy; Diffusion; Doping (additives); Electronic properties; Manganese; Boron-doped silicon; Injection-dependent lifetime spectroscopy; Temperature-dependent lifetime spectroscopy; Silicon wafers
dc.titleElectronic properties and dopant pairing behavior of manganese in boron-doped silicon
dc.typeJournal article
local.bibliographicCitation.issue10en_AU
local.bibliographicCitation.startpage103716en_AU
local.contributor.affiliationRoth, T, Fraunhofer Institute, Germanyen_AU
local.contributor.affiliationRosenits, Philipp, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationDiez, Stephan, Fraunhofer Institute, Germanyen_AU
local.contributor.affiliationGlunz, Stefan , Fraunhofer Institute, Germanyen_AU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationBeljakowa, S, University of Erlangen , Germanyen_AU
local.contributor.affiliationPensl, G, University of Erlangen, Germanyen_AU
local.contributor.authoruidu9718154en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor091299en_AU
local.identifier.absfor091505en_AU
local.identifier.absseo850505en_AU
local.identifier.ariespublicationu4251866xPUB290en_AU
local.identifier.citationvolume102en_AU
local.identifier.doi10.1063/1.2812698en_AU
local.identifier.scopusID2-s2.0-36649004559
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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