Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

Simple item page
dc.contributor.authorTianfeng, Li
dc.contributor.authorChen, Yonghai
dc.contributor.authorLei, Wen
dc.contributor.authorZhou, Xiaolong
dc.contributor.authorWang, Zhanguo
dc.date.accessioned2015-12-10T22:35:55Z
dc.date.issued2011
dc.date.updated2016-02-24T08:27:48Z
dc.description.abstractThis paper presents a comparative study on the optical properties of both type-I and type-II InAsSb/InGaAsSb nanostructures on InP substrates. A type-I band alignment is observed for InAsSb/InGaAsSb heterostructure when the Sb composition in InGaAsSb layers is 10%, while a type-II band alignment is observed for the InAsSb/InGaAsSb heterostructures when the Sb composition in InGaAsSb layers is higher than 10%. And, besides their long emission wavelength (around 2 μm), the InAsSb/In0.53Ga0.47As0.7Sb0.3 nanostructures with type-II band alignment have a much larger thermal activation energy (163 meV) compared with that of type-I band alignment (79 meV), which is helpful for suppressing the quenching of emission efficiency at high temperatures.
dc.identifier.issn1386-9477
dc.identifier.urihttp://hdl.handle.net/1885/56471
dc.publisherElsevier
dc.sourcePhysica E
dc.subjectKeywords: Band alignments; Comparative studies; Emission wavelength; Heterostructures; High temperature; InGaAsSb; InP substrates; Quenching of emission; Strain reducing layers; Thermal activation energies; Activation energy; Alignment; Gallium; Heterojunctions; In
dc.titleOptical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer
dc.typeJournal article
local.bibliographicCitation.issueOnline 18 Nov
local.bibliographicCitation.lastpage873
local.bibliographicCitation.startpage869
local.contributor.affiliationTianfeng, Li, Chinese Academy of Science
local.contributor.affiliationChen, Yonghai, Chinese Academy of Science
local.contributor.affiliationLei, Wen, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZhou, Xiaolong, Chinese Academy of Science
local.contributor.affiliationWang, Zhanguo, Chinese Academy of Science
local.contributor.authoruidLei, Wen, u4450995
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor100708 - Nanomaterials
local.identifier.ariespublicationf2965xPUB364
local.identifier.citationvolume2010
local.identifier.doi10.1016/j.physe.2010.11.010
local.identifier.scopusID2-s2.0-79551536810
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Tianfeng_Optical_properties_of_InAsSb_2011.pdf
Size:
739.85 KB
Format:
Adobe Portable Document Format
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS