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Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

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Date

2012

Authors

Yan, Kunlun
Wang, Rongping
Vu, Khu
Madden, Steve
Belay, Kidane
Elliman, Robert
Luther-Davies, Barry

Journal Title

Journal ISSN

Volume Title

Publisher

Optical Society of America

Abstract

We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.

Description

Keywords

Keywords: photoluminescence

Citation

URI

http://hdl.handle.net/1885/102829

Collections

ANU Research Publications

Source

Optical Materials Express

Type

Journal article

Book Title

Entity type

Access Statement

Open Access

License Rights

DOI

10.1364/OME.2.001270

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