Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films
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Tang, Kun
Gu, Shulin
Ye, Jiandong
Huang, Shimin
Gu, Ran
Zhu, Shunming
Zhang, Rong
Shi, Yi
Zheng, Youdou
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American Institute of Physics (AIP)
Abstract
The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.
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Applied Physics Letters
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