Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors
Date
Authors
de Azevedo, Gustavo
Glover, C J
Yu, Kin Man
Foran, Garry J
Ridgway, Mark C
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Volume Title
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Elsevier
Abstract
Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated
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Source
Nuclear Instruments and Methods in Physics Research: Section B