Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors

de  Azevedo, Gustavo; Glover, C J; Yu, Kin Man; Foran, Garry J; Ridgway, Mark C

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Direct Observation of Structural Relaxation in Amorphous Compound Semiconductors

Date

2003

Authors

de Azevedo, Gustavo

Glover, C J

Yu, Kin Man

Foran, Garry J

Ridgway, Mark C

Publisher

Elsevier

Abstract

Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated